EMZ1DXV6T1G
TRANS NPN/PNP 60V 0.1A SOT563Manufacturer: onsemi
Categories: Bipolar Transistor Arrays
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onsemi EMZ1DXV6T1G is a bipolar transistor array featuring one NPN and one PNP transistor. This SOT-563 packaged component offers a 60V collector-emitter breakdown voltage and a maximum collector current of 100mA. Transition frequencies are specified at 180MHz for the NPN and 140MHz for the PNP. The device exhibits a minimum DC current gain (hFE) of 120 at 1mA/6V. Maximum power dissipation is 500mW. Vce(sat) is a maximum of 400mV @ 5mA/50mA for the NPN and 500mV @ 5mA/50mA for the PNP. Collector cutoff current is 500nA (ICBO). This device is suitable for surface mount applications and operates within a temperature range of -55°C to 150°C. It is supplied in a Tape & Reel (TR) package. Applications include general-purpose switching and amplification in consumer electronics and industrial control systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-563, SOT-666 |
| Mounting Type | Surface Mount |
| Transistor Type | 1 NPN, 1 PNP |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Power - Max | 500mW |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 60V |
| Vce Saturation (Max) @ Ib, Ic | 400mV @ 5mA, 50mA / 500mV @ 5mA, 50mA |
| Current - Collector Cutoff (Max) | 500nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 1mA, 6V |
| Frequency - Transition | 180MHz, 140MHz |
| Supplier Device Package | SOT-563 |
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