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EMZ1DXV6T1

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EMZ1DXV6T1

TRANS NPN/PNP 60V 0.1A SOT563

Manufacturer: onsemi

Categories: Bipolar Transistor Arrays

Quality Control: Learn More

The onsemi EMZ1DXV6T1 is a bipolar transistor array featuring a complementary 1 NPN and 1 PNP configuration. This component offers a collector-emitter breakdown voltage of 60V and a maximum collector current of 100mA. With transition frequencies of 180MHz for the NPN and 140MHz for the PNP, it is suitable for applications requiring moderate switching speeds. The device exhibits a minimum DC current gain (hFE) of 120 at 1mA collector current and 6V collector-emitter voltage. Maximum power dissipation is rated at 500mW. The EMZ1DXV6T1 is supplied in a SOT-563 surface mount package and is available on tape and reel. It is commonly utilized in consumer electronics and general-purpose amplification circuits.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseSOT-563, SOT-666
Mounting TypeSurface Mount
Transistor Type1 NPN, 1 PNP
Operating Temperature-55°C ~ 150°C (TJ)
Power - Max500mW
Current - Collector (Ic) (Max)100mA
Voltage - Collector Emitter Breakdown (Max)60V
Vce Saturation (Max) @ Ib, Ic400mV @ 5mA, 50mA / 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max)500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce120 @ 1mA, 6V
Frequency - Transition180MHz, 140MHz
Supplier Device PackageSOT-563

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