EMX2DXV6T5G
TRANS 2NPN 50V 0.1A SOT563Manufacturer: onsemi
Categories: Bipolar Transistor Arrays
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The onsemi EMX2DXV6T5G is a dual NPN bipolar junction transistor array designed for surface mount applications. This device features a 50V collector-emitter breakdown voltage and a maximum collector current of 100mA, with a transition frequency of 180MHz. It offers a minimum DC current gain (hFE) of 120 at 1mA and 6V. The transistor array is packaged in a compact SOT-563 (SOT-666) case and supplied on tape and reel. Key parameters include a maximum power dissipation of 500mW and an operating temperature range of -55°C to 150°C. Applications for this component are found in consumer electronics and industrial automation. The Vce saturation is rated at a maximum of 400mV at 5mA base current and 50mA collector current.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-563, SOT-666 |
| Mounting Type | Surface Mount |
| Transistor Type | 2 NPN (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Power - Max | 500mW |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Vce Saturation (Max) @ Ib, Ic | 400mV @ 5mA, 50mA |
| Current - Collector Cutoff (Max) | 500nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 1mA, 6V |
| Frequency - Transition | 180MHz |
| Supplier Device Package | SOT-563 |