EMX2DXV6T5
TRANS 2NPN 50V 0.1A SOT563Manufacturer: onsemi
Categories: Bipolar Transistor Arrays
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The onsemi EMX2DXV6T5 is a dual NPN bipolar junction transistor (BJT) array packaged in a compact SOT-563 surface mount configuration. This component offers a collector-emitter breakdown voltage of 50V and a continuous collector current capability of 100mA. It features a minimum DC current gain (hFE) of 120 at 1mA and 6V, with a transition frequency of 180MHz. The device exhibits a maximum power dissipation of 500mW and an operating temperature range from -55°C to 150°C. Key specifications include a Vce(sat) of 400mV at 5mA/50mA and a collector cutoff current (ICBO) of 500nA. This transistor array is commonly utilized in applications within the consumer electronics and industrial automation sectors. It is supplied on tape and reel (TR).
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-563, SOT-666 |
| Mounting Type | Surface Mount |
| Transistor Type | 2 NPN (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Power - Max | 500mW |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Vce Saturation (Max) @ Ib, Ic | 400mV @ 5mA, 50mA |
| Current - Collector Cutoff (Max) | 500nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 1mA, 6V |
| Frequency - Transition | 180MHz |
| Supplier Device Package | SOT-563 |
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