EMT1DXV6T5G
TRANS 2PNP 60V 0.1A SOT563Manufacturer: onsemi
Categories: Bipolar Transistor Arrays
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onsemi EMT1DXV6T5G is a Bipolar Junction Transistor (BJT) array featuring two PNP transistors. This device offers a collector-emitter breakdown voltage of 60V and a maximum collector current of 100mA. It exhibits a minimum DC current gain (hFE) of 120 at 1mA collector current and 6V Vce. The transition frequency is specified at 140MHz, with a maximum power dissipation of 500mW. The transistor array is housed in a SOT-563 surface mount package and is supplied on tape and reel. Typical applications include consumer electronics and general-purpose switching. The collector cutoff current (ICBO) is 500nA, and Vce saturation is 500mV at 5mA base current and 50mA collector current. Operating temperature range is -55°C to 150°C.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-563, SOT-666 |
| Mounting Type | Surface Mount |
| Transistor Type | 2 PNP (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Power - Max | 500mW |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 60V |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 5mA, 50mA |
| Current - Collector Cutoff (Max) | 500nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 1mA, 6V |
| Frequency - Transition | 140MHz |
| Supplier Device Package | SOT-563 |
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