EMT1DXV6T5
TRANS 2PNP 60V 0.1A SOT563Manufacturer: onsemi
Categories: Bipolar Transistor Arrays
Quality Control: Learn More
The onsemi EMT1DXV6T5 is a dual PNP bipolar junction transistor (BJT) array designed for surface mount applications. This component features a collector-emitter breakdown voltage of 60V and a maximum continuous collector current of 100mA. With a transition frequency of 140MHz and a minimum DC current gain (hFE) of 120 at 1mA and 6V, it is suitable for various signal processing and amplification tasks. The device operates within a junction temperature range of -55°C to 150°C and has a maximum power dissipation of 500mW. Packaged in a compact SOT-563 footprint, the EMT1DXV6T5 is commonly utilized in consumer electronics, telecommunications, and industrial control systems. Its low collector cutoff current of 500nA (ICBO) contributes to efficient operation.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-563, SOT-666 |
| Mounting Type | Surface Mount |
| Transistor Type | 2 PNP (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Power - Max | 500mW |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 60V |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 5mA, 50mA |
| Current - Collector Cutoff (Max) | 500nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 1mA, 6V |
| Frequency - Transition | 140MHz |
| Supplier Device Package | SOT-563 |
Request a Quote
Clients Also Buy
NSS60100DMTTBG
TRANS 2PNP 60V 1A
MC1413BP
TRANS 7NPN DARL 50V 0.5A 16DIP
NSVT3904DXV6T1G
TRANS 2NPN 40V 0.2A SOT563
