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EMT1DXV6T1

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EMT1DXV6T1

TRANS 2PNP 60V 0.1A SOT563

Manufacturer: onsemi

Categories: Bipolar Transistor Arrays

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The onsemi EMT1DXV6T1 is a dual PNP bipolar junction transistor array. This device features a 60V collector-emitter breakdown voltage and a maximum collector current of 100mA. With a transition frequency of 140MHz and a power dissipation of 500mW, it is suitable for applications requiring compact, high-performance switching and amplification. The minimum DC current gain (hFE) is specified at 120 at 1mA collector current and 6V Vce. Saturation voltage is a maximum of 500mV at 5mA base current and 50mA collector current. Packaged in a SOT-563 surface mount configuration, it operates across a temperature range of -55°C to 150°C. This component is commonly utilized in consumer electronics and industrial control systems.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseSOT-563, SOT-666
Mounting TypeSurface Mount
Transistor Type2 PNP (Dual)
Operating Temperature-55°C ~ 150°C (TJ)
Power - Max500mW
Current - Collector (Ic) (Max)100mA
Voltage - Collector Emitter Breakdown (Max)60V
Vce Saturation (Max) @ Ib, Ic500mV @ 5mA, 50mA
Current - Collector Cutoff (Max)500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce120 @ 1mA, 6V
Frequency - Transition140MHz
Supplier Device PackageSOT-563

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