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ECH8503-TL-H

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ECH8503-TL-H

TRANS 2PNP 50V 5A 8ECH

Manufacturer: onsemi

Categories: Bipolar Transistor Arrays

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The onsemi ECH8503-TL-H is a bipolar junction transistor (BJT) array featuring two PNP transistors. This surface mount component, supplied in an 8-ECH package on tape and reel, offers a collector-emitter breakdown voltage of 50V and a maximum collector current of 5A. With a transition frequency of 280MHz and a power dissipation of 1.6W, it exhibits a minimum DC current gain (hFE) of 200 at 500mA and 2V. The saturation voltage (Vce(sat)) is specified at 190mV at 125mA and 2.5A, with a collector cutoff current of 100nA (ICBO). This device is suitable for applications requiring compact, high-performance PNP transistor arrays in automotive and industrial control systems. Its 150°C operating junction temperature rating enhances reliability in demanding environments.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-SMD, Flat Lead
Mounting TypeSurface Mount
Transistor Type2 PNP (Dual)
Operating Temperature150°C (TJ)
Power - Max1.6W
Current - Collector (Ic) (Max)5A
Voltage - Collector Emitter Breakdown (Max)50V
Vce Saturation (Max) @ Ib, Ic190mV @ 125mA, 2.5A
Current - Collector Cutoff (Max)100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce200 @ 500mA, 2V
Frequency - Transition280MHz
Supplier Device Package8-ECH

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