BC858CDW1T1
TRANS 2PNP 30V 0.1A SOT363Manufacturer: onsemi
Categories: Bipolar Transistor Arrays
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The onsemi BC858CDW1T1 is a bipolar transistor array featuring two PNP elements in a 6-TSSOP, SC-88, SOT-363 surface mount package. This component offers a collector-emitter breakdown voltage of 30V and a maximum collector current of 100mA. With a transition frequency of 100MHz and a power dissipation of 380mW, it is suitable for applications requiring high gain, exemplified by a minimum DC current gain (hFE) of 420 at 2mA and 5V. The device exhibits a Vce saturation of 650mV at 5mA/100mA and a low collector cutoff current of 15nA (ICBO). Operating temperature ranges from -55°C to 150°C. This dual PNP transistor array is commonly utilized in general purpose amplification and switching circuits within the consumer electronics and industrial automation sectors. The BC858CDW1T1 is supplied on tape and reel.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Mounting Type | Surface Mount |
| Transistor Type | 2 PNP (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Power - Max | 380mW |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 30V |
| Vce Saturation (Max) @ Ib, Ic | 650mV @ 5mA, 100mA |
| Current - Collector Cutoff (Max) | 15nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 420 @ 2mA, 5V |
| Frequency - Transition | 100MHz |
| Supplier Device Package | SC-88/SC70-6/SOT-363 |
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