BC857CDW1T1
TRANS 2PNP 45V 0.1A SOT363Manufacturer: onsemi
Categories: Bipolar Transistor Arrays
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The onsemi BC857CDW1T1 is a bipolar transistor array featuring two PNP transistors. This device operates with a Collector-Emitter Breakdown Voltage (Vce(max)) of 45V and a maximum Collector Current (Ic) of 100mA. It exhibits a DC Current Gain (hFE) of at least 420 at 2mA and 5V, with a transition frequency (fT) of 100MHz. The saturation voltage (Vce(sat)) is a maximum of 650mV at 5mA base current and 100mA collector current. The part has a maximum power dissipation of 380mW and a collector cutoff current (ICBO) of 15nA. Designed for surface mounting, it is supplied in the SC-88/SC70-6/SOT-363 package, presented on tape and reel. This component finds application in various industrial and communication systems requiring complementary PNP amplification.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Mounting Type | Surface Mount |
| Transistor Type | 2 PNP (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Power - Max | 380mW |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 45V |
| Vce Saturation (Max) @ Ib, Ic | 650mV @ 5mA, 100mA |
| Current - Collector Cutoff (Max) | 15nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 420 @ 2mA, 5V |
| Frequency - Transition | 100MHz |
| Supplier Device Package | SC-88/SC70-6/SOT-363 |
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