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BC848CDXV6T5G

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BC848CDXV6T5G

TRANS 2NPN 30V 0.1A SOT563

Manufacturer: onsemi

Categories: Bipolar Transistor Arrays

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The onsemi BC848CDXV6T5G is a bipolar junction transistor array featuring two NPN transistors. This component offers a collector-emitter breakdown voltage of 30V and a maximum collector current of 100mA. It exhibits a transition frequency of 100MHz and a power dissipation of 500mW. The device boasts a high DC current gain (hFE) of 420 minimum at 2mA collector current and 5V Vce. Saturation voltage is specified at 600mV maximum for 5mA base current and 100mA collector current. The BC848CDXV6T5G is supplied in a SOT-563 surface-mount package and is available on tape and reel. This transistor array is suitable for applications in consumer electronics and industrial control systems.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseSOT-563, SOT-666
Mounting TypeSurface Mount
Transistor Type2 NPN (Dual)
Operating Temperature-55°C ~ 150°C (TJ)
Power - Max500mW
Current - Collector (Ic) (Max)100mA
Voltage - Collector Emitter Breakdown (Max)30V
Vce Saturation (Max) @ Ib, Ic600mV @ 5mA, 100mA
Current - Collector Cutoff (Max)15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce420 @ 2mA, 5V
Frequency - Transition100MHz
Supplier Device PackageSOT-563

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