BC847CDXV6T5
TRANS 2NPN 45V 0.1A SOT563Manufacturer: onsemi
Categories: Bipolar Transistor Arrays
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onsemi BC847CDXV6T5 is a bipolar (BJT) transistor array featuring two NPN transistors. This component offers a collector-emitter breakdown voltage of 45V and a maximum continuous collector current of 100mA. The device exhibits a minimum DC current gain (hFE) of 420 at 2mA, 5V, and a transition frequency of 100MHz. With a maximum power dissipation of 500mW, it is designed for surface mounting in a SOT-563 package. Key parameters include a collector cutoff current of 15nA (ICBO) and a Vce saturation of 600mV at 5mA, 100mA. The operating temperature range is -55°C to 150°C. This transistor array is commonly utilized in industrial, automotive, and consumer electronics applications. It is supplied on a tape and reel.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-563, SOT-666 |
| Mounting Type | Surface Mount |
| Transistor Type | 2 NPN (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Power - Max | 500mW |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 45V |
| Vce Saturation (Max) @ Ib, Ic | 600mV @ 5mA, 100mA |
| Current - Collector Cutoff (Max) | 15nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 420 @ 2mA, 5V |
| Frequency - Transition | 100MHz |
| Supplier Device Package | SOT-563 |
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