BC847CDXV6T1H
TRANS 2NPN 45V 0.1A SOT563-6Manufacturer: onsemi
Categories: Bipolar Transistor Arrays
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The onsemi BC847CDXV6T1H is a dual NPN bipolar junction transistor (BJT) array designed for surface mount applications. This component features a breakdown voltage of 45V and a continuous collector current capability of 100mA. With a transition frequency of 100MHz and a maximum power dissipation of 500mW, it is suitable for a variety of general-purpose amplification and switching tasks. The device exhibits a minimum DC current gain (hFE) of 420 at 2mA and 5V, with a Vce saturation of 600mV at 5mA and 100mA. The collector cutoff current is a low 15nA (ICBO). Supplied in a SOT-563 package on tape and reel, this transistor array finds application in consumer electronics and industrial control systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-563, SOT-666 |
| Mounting Type | Surface Mount |
| Transistor Type | 2 NPN (Dual) |
| Operating Temperature | - |
| Power - Max | 500mW |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 45V |
| Vce Saturation (Max) @ Ib, Ic | 600mV @ 5mA, 100mA |
| Current - Collector Cutoff (Max) | 15nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 420 @ 2mA, 5V |
| Frequency - Transition | 100MHz |
| Supplier Device Package | SOT-563 |
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