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Bipolar Transistor Arrays, Pre-Biased

UMA4NT1G

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UMA4NT1G

TRANS 2PNP PREBIAS 0.15W SC70

Manufacturer: onsemi

Categories: Bipolar Transistor Arrays, Pre-Biased

Quality Control: Learn More

onsemi UMA4NT1G is a dual PNP pre-biased bipolar transistor array designed for surface mount applications. This component features a 50V collector-emitter breakdown voltage and a maximum collector current of 100mA. The integrated base resistors are specified as 10kOhms (R1), facilitating simplified circuit design. With a power dissipation of 150mW and a minimum DC current gain (hFE) of 160 at 5mA collector current and 10V Vce, the UMA4NT1G offers efficient amplification. Saturation voltage is a maximum of 250mV at 300µA base current and 10mA collector current. Supplied in the SC-88A (SC-70-5/SOT-353) package and delivered on tape and reel, this device is suitable for use in consumer electronics and industrial control systems.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case5-TSSOP, SC-70-5, SOT-353
Mounting TypeSurface Mount
Transistor Type2 PNP - Pre-Biased (Dual)
Power - Max150mW
Current - Collector (Ic) (Max)100mA
Voltage - Collector Emitter Breakdown (Max)50V
Vce Saturation (Max) @ Ib, Ic250mV @ 300µA, 10mA
Current - Collector Cutoff (Max)500nA
DC Current Gain (hFE) (Min) @ Ic, Vce160 @ 5mA, 10V
Frequency - Transition-
Resistor - Base (R1)10kOhms
Resistor - Emitter Base (R2)-
Supplier Device PackageSC-88A (SC-70-5/SOT-353)

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