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Bipolar Transistor Arrays, Pre-Biased

UMA4NT1

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UMA4NT1

TRANS 2PNP PREBIAS 0.15W SC70

Manufacturer: onsemi

Categories: Bipolar Transistor Arrays, Pre-Biased

Quality Control: Learn More

The onsemi UMA4NT1 is a dual PNP pre-biased bipolar junction transistor (BJT) designed for surface mount applications. This component features a 50V collector-emitter breakdown voltage and a maximum collector current of 100mA. It offers a typical DC current gain (hFE) of 160 at 5mA collector current and 10V Vce. The integrated base resistor (R1) is 10kOhms, simplifying circuit design. The saturation voltage (Vce Sat) is a maximum of 250mV at 300µA base current and 10mA collector current. The device is housed in an SC-88A (SC-70-5/SOT-353) package and supplied on tape and reel. This transistor array is suited for applications requiring simplified switching and logic functions, commonly found in consumer electronics and industrial control systems.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case5-TSSOP, SC-70-5, SOT-353
Mounting TypeSurface Mount
Transistor Type2 PNP - Pre-Biased (Dual)
Power - Max150mW
Current - Collector (Ic) (Max)100mA
Voltage - Collector Emitter Breakdown (Max)50V
Vce Saturation (Max) @ Ib, Ic250mV @ 300µA, 10mA
Current - Collector Cutoff (Max)500nA
DC Current Gain (hFE) (Min) @ Ic, Vce160 @ 5mA, 10V
Frequency - Transition-
Resistor - Base (R1)10kOhms
Resistor - Emitter Base (R2)-
Supplier Device PackageSC-88A (SC-70-5/SOT-353)

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