SSVMUN5312DW1T2G
TRANS PREBIAS 1NPN 1PNP 50V SC88Manufacturer: onsemi
Categories: Bipolar Transistor Arrays, Pre-Biased
Quality Control: Learn More
onsemi SSVMUN5312DW1T2G is a dual NPN/PNP pre-biased bipolar transistor array designed for surface mount applications. This AEC-Q101 qualified component features integrated 22kO base resistors (R1 and R2) for simplified circuit design. It offers a collector-emitter breakdown voltage of 50V, with a continuous collector current capability of 100mA and a maximum power dissipation of 187mW. The transistor exhibits a minimum DC current gain (hFE) of 60 at 5mA collector current and 10V Vce, and a saturation voltage of 250mV at 300µA base current and 10mA collector current. Collector cutoff current is a maximum of 500nA. The device is supplied in a compact SC-88/SC70-6/SOT-363 package, presented on a tape and reel. This component is suitable for automotive applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Mounting Type | Surface Mount |
| Transistor Type | 1 NPN, 1 PNP - Pre-Biased (Dual) |
| Power - Max | 187mW |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 300µA, 10mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 60 @ 5mA, 10V |
| Frequency - Transition | - |
| Resistor - Base (R1) | 22kOhms |
| Resistor - Emitter Base (R2) | 22kOhms |
| Supplier Device Package | SC-88/SC70-6/SOT-363 |
| Grade | Automotive |
| Qualification | AEC-Q101 |
Request a Quote
Clients Also Buy
MUN5235DW1T1
TRANS 2NPN PREBIAS 0.25W SOT363
NSBC144EPDP6T5G
TRANS PREBIAS NPN/PNP 50V SOT963
NSBC113EPDXV6T1G
TRANS PREBIAS NPN/PNP SOT563
