NSVBC143ZPDXV6T5G
TRANS PREBIAS NPN/PNP 50V SOT563Manufacturer: onsemi
Categories: Bipolar Transistor Arrays, Pre-Biased
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The onsemi NSVBC143ZPDXV6T5G is a dual pre-biased bipolar transistor array featuring one NPN and one PNP transistor. This AEC-Q101 qualified component offers a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA. It is supplied in a compact SOT-563 package, suitable for surface mounting applications. The device integrates internal base resistors, specified as 4.7kOhms (R1) and 47kOhms (R2), simplifying circuit design by eliminating external biasing components. Its typical DC current gain (hFE) is 80 at 5mA collector current and 10V Vce. The NSVBC143ZPDXV6T5G is designed with a maximum power dissipation of 500mW and a Vce saturation of 250mV at 1mA base current and 10mA collector current. This component finds application in automotive systems, contributing to signal switching and amplification functions. The product is supplied on a tape and reel for automated assembly.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-563, SOT-666 |
| Mounting Type | Surface Mount |
| Transistor Type | 1 NPN, 1 PNP - Pre-Biased (Dual) |
| Power - Max | 500mW |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 1mA, 10mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 5mA, 10V |
| Frequency - Transition | - |
| Resistor - Base (R1) | 4.7kOhms |
| Resistor - Emitter Base (R2) | 47kOhms |
| Supplier Device Package | SOT-563 |
| Grade | Automotive |
| Qualification | AEC-Q101 |
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