NSVBC143JPDXV6T5G
SS SOT563 RSTR XSTR TRManufacturer: onsemi
Categories: Bipolar Transistor Arrays, Pre-Biased
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The onsemi NSVBC143JPDXV6T5G is a dual pre-biased bipolar junction transistor (BJT) featuring one NPN and one PNP configuration. This device offers a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA, with a maximum power dissipation of 357mW. It is supplied in a compact SOT-563 surface-mount package. The integrated base resistors include values of 2.2kOhms and 47kOhms for the NPN and PNP transistors respectively, with an emitter base resistor of 47kOhms. The minimum DC current gain (hFE) is specified at 80 at 5mA collector current and 10V Vce. Saturation voltage (Vce(sat)) is a maximum of 250mV at 300µA base current and 10mA collector current. Designed for automotive applications, this component meets AEC-Q101 qualification standards and is provided in tape and reel packaging. It finds application in automotive systems and general-purpose switching.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-563, SOT-666 |
| Mounting Type | Surface Mount |
| Transistor Type | 1 NPN, 1 PNP - Pre-Biased (Dual) |
| Power - Max | 357mW |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 300µA, 10mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 5mA, 10V |
| Frequency - Transition | - |
| Resistor - Base (R1) | 2.2kOhms, 47kOhms |
| Resistor - Emitter Base (R2) | 47kOhms |
| Supplier Device Package | SOT-563 |
| Grade | Automotive |
| Qualification | AEC-Q101 |
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