NSVBC123JDXV6T5G
SS SOT563 SRF MT RST XSTRManufacturer: onsemi
Categories: Bipolar Transistor Arrays, Pre-Biased
Quality Control: Learn More
The onsemi NSVBC123JDXV6T5G is a dual NPN pre-biased bipolar transistor array in a SOT-563 package, designed for surface mounting. This component features integrated base resistors, specified at 2.2 kOhms for R1 and 47 kOhms for R2, facilitating simplified circuit design. The device offers a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA, with a power dissipation capability of 500mW. Key electrical characteristics include a minimum DC current gain (hFE) of 80 at 5mA/10V and a saturation voltage (Vce Sat) of 250mV at 1mA/10mA. The collector cutoff current is rated at a maximum of 500nA. Qualified to AEC-Q101 standards for automotive applications, this device is supplied on a tape and reel (TR).
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-563, SOT-666 |
| Mounting Type | Surface Mount |
| Transistor Type | 2 NPN - Pre-Biased (Dual) |
| Power - Max | 500mW |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 1mA, 10mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 5mA, 10V |
| Frequency - Transition | - |
| Resistor - Base (R1) | 2.2kOhms |
| Resistor - Emitter Base (R2) | 47kOhms |
| Supplier Device Package | SOT-563 |
| Grade | Automotive |
| Qualification | AEC-Q101 |
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