NSVBC114YPDXV65G
TRANS PREBIAS NPN/PNP SOT563Manufacturer: onsemi
Categories: Bipolar Transistor Arrays, Pre-Biased
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The onsemi NSVBC114YPDXV65G is a dual pre-biased bipolar transistor featuring one NPN and one PNP configuration within a SOT-563 package. This automotive-grade component is qualified to AEC-Q101 standards, offering a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA. It boasts a typical power dissipation of 500mW and a quiescent current of 500nA. The internal base resistors are specified as 10kOhms for the NPN and 47kOhms for the PNP. Saturation voltage is 250mV at 300µA base current and 10mA collector current, with a minimum DC current gain (hFE) of 80 at 5mA collector current and 10V Vce. This device is supplied on tape and reel. Its robust design makes it suitable for applications in automotive systems and consumer electronics.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-563, SOT-666 |
| Mounting Type | Surface Mount |
| Transistor Type | 1 NPN, 1 PNP - Pre-Biased (Dual) |
| Power - Max | 500mW |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 300µA, 10mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 5mA, 10V |
| Frequency - Transition | - |
| Resistor - Base (R1) | 10kOhms |
| Resistor - Emitter Base (R2) | 47kOhms |
| Supplier Device Package | SOT-563 |
| Grade | Automotive |
| Qualification | AEC-Q101 |
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