NSVBC114EPDXV6T1G
TRANS PREBIAS NPN/PNP 50V SOT563Manufacturer: onsemi
Categories: Bipolar Transistor Arrays, Pre-Biased
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The onsemi NSVBC114EPDXV6T1G is a dual, pre-biased bipolar transistor featuring one NPN and one PNP element within a compact SOT-563 package. Designed for automotive applications and qualified to AEC-Q101 standards, this component offers a collector-emitter breakdown voltage of 50V. It handles a maximum collector current of 100mA and a maximum power dissipation of 500mW. The integrated base resistors, specified at 10k ohms for both R1 and R2, facilitate simplified circuit design. Saturation voltage is rated at 250mV at 300µA base current and 10mA collector current. This device finds utility in various automotive control and signaling circuits.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-563, SOT-666 |
| Mounting Type | Surface Mount |
| Transistor Type | 1 NPN, 1 PNP - Pre-Biased (Dual) |
| Power - Max | 500mW |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 300µA, 10mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 35 @ 5mA, 10V |
| Frequency - Transition | - |
| Resistor - Base (R1) | 10kOhms |
| Resistor - Emitter Base (R2) | 10kOhms |
| Supplier Device Package | SOT-563 |
| Grade | Automotive |
| Qualification | AEC-Q101 |
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