NSVB144EPDXV6T1G
TRANS PREBIAS NPN/PNP SOT563Manufacturer: onsemi
Categories: Bipolar Transistor Arrays, Pre-Biased
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The onsemi NSVB144EPDXV6T1G is a dual pre-biased bipolar transistor featuring one NPN and one PNP transistor in a single SOT-563 package. This AEC-Q101 qualified component is designed for automotive applications and offers a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA. Each transistor includes integrated base resistors of 47kOhms, simplifying circuit design and reducing component count. The device exhibits a minimum DC current gain (hFE) of 80 at 5mA collector current and 10V Vce, with a saturation voltage of 250mV at 300µA base current and 10mA collector current. Its maximum power dissipation is 500mW. This component is typically used in signal switching and amplification circuits within automotive electronic systems. It is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-563, SOT-666 |
| Mounting Type | Surface Mount |
| Transistor Type | 1 NPN, 1 PNP - Pre-Biased (Dual) |
| Power - Max | 500mW |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 300µA, 10mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 5mA, 10V |
| Frequency - Transition | - |
| Resistor - Base (R1) | 47kOhms |
| Resistor - Emitter Base (R2) | 47kOhms |
| Supplier Device Package | SOT-563 |
| Grade | Automotive |
| Qualification | AEC-Q101 |
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