NSVB143ZPDXV6T1G
TRANS PREBIAS NPN/PNP 50V SOT563Manufacturer: onsemi
Categories: Bipolar Transistor Arrays, Pre-Biased
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The onsemi NSVB143ZPDXV6T1G is a dual pre-biased bipolar transistor array featuring one NPN and one PNP transistor. This AEC-Q101 qualified component offers a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA. It is supplied in a compact SOT-563 package, suitable for surface mounting. The integrated base resistors are 4.7kOhms (R1) and 47kOhms (R2), facilitating simplified circuit design. With a minimum DC current gain (hFE) of 80 at 5mA and 10V, and a maximum power dissipation of 500mW, this device is engineered for demanding automotive applications. The saturation voltage (Vce Sat) is a maximum of 250mV at 1mA base current and 10mA collector current.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-563, SOT-666 |
| Mounting Type | Surface Mount |
| Transistor Type | 1 NPN, 1 PNP - Pre-Biased (Dual) |
| Power - Max | 500mW |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 1mA, 10mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 5mA, 10V |
| Frequency - Transition | - |
| Resistor - Base (R1) | 4.7kOhms |
| Resistor - Emitter Base (R2) | 47kOhms |
| Supplier Device Package | SOT-563 |
| Grade | Automotive |
| Qualification | AEC-Q101 |
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