NSVB143TPDXV6T1G
TRANS NPN/PNP PREBIAS SOT563Manufacturer: onsemi
Categories: Bipolar Transistor Arrays, Pre-Biased
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The onsemi NSVB143TPDXV6T1G is a dual pre-biased bipolar transistor array featuring one NPN and one PNP transistor within a compact SOT-563 package. This AEC-Q101 qualified component is designed for surface mount applications and offers a collector current capability of up to 100mA with a 50V collector-emitter breakdown voltage. It includes integrated base resistors, with a typical value of 4.7kOhms for the NPN's base, facilitating simplified circuit design and reduced component count. The device exhibits a minimum DC current gain (hFE) of 160 at 5mA and 10V, and a saturation voltage (Vce(sat)) of 250mV at 300µA/10mA. This component is commonly utilized in automotive applications, particularly in digital logic circuits and signal switching. The NSVB143TPDXV6T1G is supplied in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-563, SOT-666 |
| Mounting Type | Surface Mount |
| Transistor Type | 1 NPN, 1 PNP - Pre-Biased (Dual) |
| Power - Max | 357mW |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 300µA, 10mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 160 @ 5mA, 10V |
| Frequency - Transition | - |
| Resistor - Base (R1) | 4.7kOhms |
| Resistor - Emitter Base (R2) | - |
| Supplier Device Package | SOT-563 |
| Grade | Automotive |
| Qualification | AEC-Q101 |
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