NSVB123JPDXV6T1G
TRANS PREBIAS NPN/PNP SOT563Manufacturer: onsemi
Categories: Bipolar Transistor Arrays, Pre-Biased
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The onsemi NSVB123JPDXV6T1G is a dual pre-biased bipolar transistor featuring one NPN and one PNP configuration within a SOT-563 package. This AEC-Q101 qualified component is designed for automotive applications and offers a collector-emitter breakdown voltage of 50V. It provides a typical collector current of 100mA and a maximum power dissipation of 500mW. The device incorporates internal base resistors of 2.2kOhms for the NPN and 4.7kOhms for the PNP, facilitating simplified circuit design. Saturation voltage is specified at a maximum of 250mV at 300µA base current and 10mA collector current, with a minimum DC current gain (hFE) of 80 at 5mA collector current and 10V Vce. The NSVB123JPDXV6T1G is supplied on tape and reel.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-563, SOT-666 |
| Mounting Type | Surface Mount |
| Transistor Type | 1 NPN, 1 PNP - Pre-Biased (Dual) |
| Power - Max | 500mW |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 300µA, 10mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 5mA, 10V |
| Frequency - Transition | - |
| Resistor - Base (R1) | 2.2kOhms |
| Resistor - Emitter Base (R2) | 4.7kOhms |
| Supplier Device Package | SOT-563 |
| Grade | Automotive |
| Qualification | AEC-Q101 |
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