NSVB114YPDXV6T1G
TRANS BRT 50V 100MA SOT563Manufacturer: onsemi
Categories: Bipolar Transistor Arrays, Pre-Biased
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The onsemi NSVB114YPDXV6T1G is a dual, pre-biased bipolar transistor featuring one NPN and one PNP configuration. This device offers a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA. With a power dissipation capability of 500mW, it is suitable for applications requiring reduced component count and simplified circuit design. The integrated base resistors, R1 (10kOhms) and R2 (47kOhms), facilitate direct connection to logic signals. This component is qualified to AEC-Q101 standards, making it appropriate for automotive applications. It is supplied in a compact SOT-563 surface mount package, presented on a tape and reel. Typical saturation voltage is 250mV at 300µA base current and 10mA collector current, with a minimum DC current gain (hFE) of 80 at 5mA collector current and 10V Vce.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-563, SOT-666 |
| Mounting Type | Surface Mount |
| Transistor Type | 1 NPN, 1 PNP - Pre-Biased (Dual) |
| Power - Max | 500mW |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 300µA, 10mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 5mA, 10V |
| Frequency - Transition | - |
| Resistor - Base (R1) | 10kOhms |
| Resistor - Emitter Base (R2) | 47kOhms |
| Supplier Device Package | SOT-563 |
| Grade | Automotive |
| Qualification | AEC-Q101 |
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