NSTB60BDW1T1
TRANS NPN PREBIAS/PNP SOT363Manufacturer: onsemi
Categories: Bipolar Transistor Arrays, Pre-Biased
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The onsemi NSTB60BDW1T1 is a bipolar transistor array featuring one NPN pre-biased transistor and one PNP transistor, housed in a compact SOT-363 (SC-88/SC70-6) surface-mount package. This device offers a collector-emitter breakdown voltage of 50V and a maximum collector current of 150mA. The NPN transistor includes integrated base resistors (R1 = 22kOhms) and the PNP transistor includes integrated emitter-base resistors (R2 = 47kOhms), simplifying circuit design and reducing component count. With a transition frequency of 140MHz and maximum power dissipation of 250mW, it is suitable for applications in consumer electronics and industrial control systems. Typical DC current gain (hFE) ranges from 80 to 120. The device is supplied on tape and reel.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Mounting Type | Surface Mount |
| Transistor Type | 1 NPN Pre-Biased, 1 PNP |
| Power - Max | 250mW |
| Current - Collector (Ic) (Max) | 150mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 5mA, 10mA / 500mV @ 5mA, 50mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 5mA, 10V / 120 @ 5mA, 10V |
| Frequency - Transition | 140MHz |
| Resistor - Base (R1) | 22kOhms |
| Resistor - Emitter Base (R2) | 47kOhms |
| Supplier Device Package | SC-88/SC70-6/SOT-363 |
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