NSTB1002DXV5T1
TRANS NPN PREBIAS/PNP 0.5W SOT55Manufacturer: onsemi
Categories: Bipolar Transistor Arrays, Pre-Biased
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The onsemi NSTB1002DXV5T1 is a dual pre-biased bipolar transistor array featuring one NPN and one PNP transistor in a compact SOT-553 surface mount package. This component offers a 50V collector-emitter breakdown for the NPN and 40V for the PNP. The NPN transistor supports a collector current of up to 100mA with a saturation voltage of 250mV at 300µA base current and 10mA collector current, and a minimum DC current gain (hFE) of 80 at 5mA, 10V. The PNP transistor handles up to 200mA collector current with a saturation voltage of 400mV at 5mA base current and 50mA collector current, and a minimum DC current gain (hFE) of 100 at 1mA, 10V. Both transistors exhibit a transition frequency of 250MHz and a maximum power dissipation of 500mW. Integrated base resistors of 47kOhms are included for both devices. This component is supplied on a Tape & Reel (TR) for automated assembly and finds application in various industrial and consumer electronics where simplified logic or signal conditioning is required.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-553 |
| Mounting Type | Surface Mount |
| Transistor Type | 1 NPN Pre-Biased, 1 PNP |
| Power - Max | 500mW |
| Current - Collector (Ic) (Max) | 100mA, 200mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V, 40V |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 300µA, 10mA / 400mV @ 5mA, 50mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 5mA, 10V / 100 @ 1mA, 10V |
| Frequency - Transition | 250MHz |
| Resistor - Base (R1) | 47kOhms |
| Resistor - Emitter Base (R2) | 47kOhms |
| Supplier Device Package | SOT-553 |
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