NSM46211DW6T1G
TRANS NPN PREBIAS/NPN SOT363Manufacturer: onsemi
Categories: Bipolar Transistor Arrays, Pre-Biased
Quality Control: Learn More
The onsemi NSM46211DW6T1G is a bipolar array featuring one pre-biased NPN transistor and one standard NPN transistor in an SC-88/SC70-6/SOT-363 package. This device offers a collector current (Ic) of up to 100mA and a maximum power dissipation of 230mW. The pre-biased transistor includes integrated base resistors of 10kOhms (R1) and 10kOhms (R2). Collector emitter breakdown voltages (Vce) are specified at 50V and 65V. Saturation voltages (Vce Sat) are listed as 250mV at 300µA/10mA and 600mV at 5mA/100mA. The minimum DC current gain (hFE) is 35 at 5mA/10V for the pre-biased transistor and 200 at 2mA/5V for the standard NPN. This component finds application in industrial automation and consumer electronics. The NSM46211DW6T1G is supplied on Tape & Reel.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Mounting Type | Surface Mount |
| Transistor Type | 1 NPN Pre-Biased, 1 NPN |
| Power - Max | 230mW |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V, 65V |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 300µA, 10mA / 600mV @ 5mA, 100mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 35 @ 5mA, 10V / 200 @ 2mA, 5V |
| Frequency - Transition | - |
| Resistor - Base (R1) | 10kOhms |
| Resistor - Emitter Base (R2) | 10kOhms |
| Supplier Device Package | SC-88/SC70-6/SOT-363 |