NSM21356DW6T1G
TRANS NPN PREBIAS/PNP SOT363Manufacturer: onsemi
Categories: Bipolar Transistor Arrays, Pre-Biased
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The onsemi NSM21356DW6T1G is a pre-biased bipolar transistor array in a SOT-363 package. This component integrates one NPN and one PNP transistor, both featuring internal base resistors for simplified circuit design. The NPN transistor offers a Vce(sat) of 250mV at 300µA/10mA and 650mV at 5mA/100mA, with a DC current gain (hFE) of 80 @ 5mA/10V and 220 @ 2mA/5V. The PNP transistor supports a breakdown voltage of up to 65V. With a maximum collector current of 100mA and power dissipation of 230mW, this device is suitable for applications in consumer electronics, industrial control, and automotive systems requiring compact and efficient switching or amplification. The NSM21356DW6T1G is supplied in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Mounting Type | Surface Mount |
| Transistor Type | 1 NPN Pre-Biased, 1 PNP |
| Power - Max | 230mW |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V, 65V |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 300µA, 10mA / 650mV @ 5mA, 100mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 5mA, 10V / 220 @ 2mA, 5V |
| Frequency - Transition | - |
| Resistor - Base (R1) | 47kOhms |
| Resistor - Emitter Base (R2) | 47kOhms |
| Supplier Device Package | SC-88/SC70-6/SOT-363 |
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