NSM21156DW6T1G
TRANS NPN PREBIAS/PNP SOT363Manufacturer: onsemi
Categories: Bipolar Transistor Arrays, Pre-Biased
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The onsemi NSM21156DW6T1G is a bipolar transistor array featuring one pre-biased NPN transistor and one PNP transistor, housed in a compact SOT-363 package. This device offers distinct collector-emitter breakdown voltages of 50V for the NPN and 65V for the PNP. The NPN transistor provides a minimum DC current gain (hFE) of 35 at 5mA and 5V Vce, with a base resistor (R1) of 10kOhms. The PNP transistor has a minimum DC current gain (hFE) of 220 at 2mA and 5V Vce, with an emitter base resistor (R2) of 10kOhms. Both transistors support a maximum collector current (Ic) of 100mA and a power dissipation of 230mW. Saturation voltages are specified at 250mV for 300µA base current and 10mA collector current for the NPN, and 300mV for 500µA base current and 10mA collector current for the PNP. This component is utilized in various applications across consumer electronics and industrial automation. The device is supplied on a tape and reel.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Mounting Type | Surface Mount |
| Transistor Type | 1 NPN Pre-Biased, 1 PNP |
| Power - Max | 230mW |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V, 65V |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 300µA, 10mA / 300mV @ 500µA, 10mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 35 @ 5mA, 10V / 220 @ 2mA, 5V |
| Frequency - Transition | - |
| Resistor - Base (R1) | 10kOhms |
| Resistor - Emitter Base (R2) | 10kOhms |
| Supplier Device Package | SC-88/SC70-6/SOT-363 |
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