NSM11156DW6T1G
TRANS PNP PREBIAS/PNP 0.23W SC88Manufacturer: onsemi
Categories: Bipolar Transistor Arrays, Pre-Biased
Quality Control: Learn More
The onsemi NSM11156DW6T1G is a dual PNP bipolar transistor array featuring one pre-biased PNP transistor and one standard PNP transistor. This component offers Collector Emitter Breakdown Voltages of 50V and 65V respectively, with a maximum Collector Current of 100mA. The pre-biased transistor includes internal base resistors (R1 = 10kO, R2 = 10kO), simplifying circuit design and reducing component count. Its maximum power dissipation is 230mW, suitable for surface mount applications. The NSM11156DW6T1G is commonly utilized in consumer electronics, industrial control, and automotive systems for switching and amplification tasks. Supplied in a compact SC-88/SC70-6/SOT-363 package on tape and reel.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Mounting Type | Surface Mount |
| Transistor Type | 1 PNP Pre-Biased, 1 PNP |
| Power - Max | 230mW |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V, 65V |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 300µA, 10mA / 650mV @ 5mA, 100mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 35 @ 5mA, 10V / 220 @ 2mA, 5V |
| Frequency - Transition | - |
| Resistor - Base (R1) | 10kOhms |
| Resistor - Emitter Base (R2) | 10kOhms |
| Supplier Device Package | SC-88/SC70-6/SOT-363 |
Request a Quote
Clients Also Buy
MUN5235DW1T1
TRANS 2NPN PREBIAS 0.25W SOT363
NSBC144EPDP6T5G
TRANS PREBIAS NPN/PNP 50V SOT963
NSBC113EPDXV6T1G
TRANS PREBIAS NPN/PNP SOT563
