NSBC144WPDP6T5G
TRANS PREBIAS NPN/PNP 50V SOT963Manufacturer: onsemi
Categories: Bipolar Transistor Arrays, Pre-Biased
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The onsemi NSBC144WPDP6T5G is a dual pre-biased bipolar transistor (BJT) featuring one NPN and one PNP transistor in a single SOT-963 package. This surface mount device offers a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA. With integrated base resistors of 47kOhms (R1) and 22kOhms (R2), it simplifies circuit design by eliminating external biasing components. The device exhibits a minimum DC current gain (hFE) of 80 at 5mA, 10V and a saturation voltage (Vce(sat)) of 250mV at 300µA, 10mA. The NSBC144WPDP6T5G is suitable for applications requiring simplified switching and logic functions, commonly found in portable electronics and consumer devices. It is supplied on a tape and reel for automated assembly.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-963 |
| Mounting Type | Surface Mount |
| Transistor Type | 1 NPN, 1 PNP - Pre-Biased (Dual) |
| Power - Max | 339mW |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 300µA, 10mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 5mA, 10V |
| Frequency - Transition | - |
| Resistor - Base (R1) | 47kOhms |
| Resistor - Emitter Base (R2) | 22kOhms |
| Supplier Device Package | SOT-963 |
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