NSBC144WDXV6T1G
TRANS PREBIAS 2NPN 50V SOT563Manufacturer: onsemi
Categories: Bipolar Transistor Arrays, Pre-Biased
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The onsemi NSBC144WDXV6T1G is a dual NPN, pre-biased bipolar transistor array in a SOT-563 package. This device features a 50V collector-emitter breakdown voltage and a maximum collector current of 100mA. With integrated base resistors (R1 = 47kO, R2 = 22kO), it simplifies circuit design for applications requiring bias control. The transistor exhibits a minimum DC current gain (hFE) of 80 at 5mA and 10V, with a saturation voltage (Vce(sat)) of 250mV at 5mA base current and 10mA collector current. Its maximum power dissipation is 500mW. This component is suitable for use in consumer electronics and industrial control systems. The NSBC144WDXV6T1G is supplied on tape and reel.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-563, SOT-666 |
| Mounting Type | Surface Mount |
| Transistor Type | 2 NPN - Pre-Biased (Dual) |
| Power - Max | 500mW |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 5mA, 10mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 5mA, 10V |
| Frequency - Transition | - |
| Resistor - Base (R1) | 47kOhms |
| Resistor - Emitter Base (R2) | 22kOhms |
| Supplier Device Package | SOT-563 |
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