NSBC144EPDXV6T5
TRANS PREBIAS NPN/PNP SOT563Manufacturer: onsemi
Categories: Bipolar Transistor Arrays, Pre-Biased
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onsemi NSBC144EPDXV6T5 is a pre-biased bipolar transistor featuring a dual NPN and PNP configuration. This surface mount component, housed in a SOT-563 package, offers a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA. Each transistor within the array is pre-biased with integrated base resistors (R1 = 47kO, R2 = 47kO) enabling simplified circuit design. The device exhibits a minimum DC current gain (hFE) of 80 at 5mA collector current and 10V collector-emitter voltage, with a saturation voltage (Vce Sat) of 250mV at 300µA base current and 10mA collector current. Maximum power dissipation is rated at 500mW. This component is commonly utilized in industrial applications.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-563, SOT-666 |
| Mounting Type | Surface Mount |
| Transistor Type | 1 NPN, 1 PNP - Pre-Biased (Dual) |
| Power - Max | 500mW |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 300µA, 10mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 5mA, 10V |
| Frequency - Transition | - |
| Resistor - Base (R1) | 47kOhms |
| Resistor - Emitter Base (R2) | 47kOhms |
| Supplier Device Package | SOT-563 |
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