NSBC144EPDP6T5G
TRANS PREBIAS NPN/PNP 50V SOT963Manufacturer: onsemi
Categories: Bipolar Transistor Arrays, Pre-Biased
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The onsemi NSBC144EPDP6T5G is a dual pre-biased bipolar transistor array featuring one NPN and one PNP transistor. This device offers a collector-emitter breakdown voltage of up to 50V and a maximum collector current of 100mA. It is supplied in a compact SOT-963 surface mount package, ideal for space-constrained applications. The internal base resistors are rated at 47kOhms for both R1 and R2, enabling quick and easy circuit implementation without external biasing components. With a minimum DC current gain (hFE) of 80 at 5mA collector current and 10V Vce, this transistor array is suitable for general-purpose switching and amplification tasks. The device dissipates up to 339mW and is delivered on tape and reel. Its pre-biased configuration simplifies design in consumer electronics and industrial control systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-963 |
| Mounting Type | Surface Mount |
| Transistor Type | 1 NPN, 1 PNP - Pre-Biased (Dual) |
| Power - Max | 339mW |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 300µA, 10mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 5mA, 10V |
| Frequency - Transition | - |
| Resistor - Base (R1) | 47kOhms |
| Resistor - Emitter Base (R2) | 47kOhms |
| Supplier Device Package | SOT-963 |
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