NSBC144EDXV6T5G
TRANS PREBIAS 2NPN 50V SOT563Manufacturer: onsemi
Categories: Bipolar Transistor Arrays, Pre-Biased
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onsemi NSBC144EDXV6T5G is a dual, pre-biased bipolar transistor featuring two NPN elements within a SOT-563 package. This device operates with a Collector-Emitter Breakdown Voltage (Vce(max)) of 50V and a maximum Collector Current (Ic) of 100mA. It offers a typical Vce Saturation of 250mV at 300µA base current and 10mA collector current. The integrated base resistors are specified at 47kOhms for both internal resistors. With a maximum power dissipation of 500mW and a DC Current Gain (hFE) of at least 80 at 5mA collector current and 10V Vce, this component is suitable for applications requiring simplified circuit design and reduced component count. The NSBC144EDXV6T5G is commonly utilized in consumer electronics, industrial control systems, and automotive applications where space and assembly efficiency are critical. It is supplied in tape and reel packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-563, SOT-666 |
| Mounting Type | Surface Mount |
| Transistor Type | 2 NPN - Pre-Biased (Dual) |
| Power - Max | 500mW |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 300µA, 10mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 5mA, 10V |
| Frequency - Transition | - |
| Resistor - Base (R1) | 47kOhms |
| Resistor - Emitter Base (R2) | 47kOhms |
| Supplier Device Package | SOT-563 |
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