NSBC143ZPDXV6T5G
TRANS PREBIAS NPN/PNP SOT563Manufacturer: onsemi
Categories: Bipolar Transistor Arrays, Pre-Biased
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The onsemi NSBC143ZPDXV6T5G is a dual, pre-biased bipolar transistor featuring one NPN and one PNP element within a compact SOT-563 surface mount package. This component is designed for applications requiring simple logic functions and signal switching. It offers a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA, with a maximum power dissipation of 500mW. The integrated base resistors are specified at 4.7kOhms (R1) and 47kOhms (R2), facilitating straightforward biasing. Typical DC current gain (hFE) is 80 at 5mA collector current and 10V Vce. Applications include mobile communications, consumer electronics, and general-purpose amplification where space and component count are critical. Supplied on tape and reel (TR).
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-563, SOT-666 |
| Mounting Type | Surface Mount |
| Transistor Type | 1 NPN, 1 PNP - Pre-Biased (Dual) |
| Power - Max | 500mW |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 1mA, 10mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 5mA, 10V |
| Frequency - Transition | - |
| Resistor - Base (R1) | 4.7kOhms |
| Resistor - Emitter Base (R2) | 47kOhms |
| Supplier Device Package | SOT-563 |
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