NSBC143ZPDXV6T5
TRANS PREBIAS NPN/PNP SOT563Manufacturer: onsemi
Categories: Bipolar Transistor Arrays, Pre-Biased
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The onsemi NSBC143ZPDXV6T5 is a dual pre-biased bipolar transistor, featuring one NPN and one PNP transistor in a single SOT-563 package. This component offers a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA, with a maximum power dissipation of 500mW. The integrated base resistors are 4.7kOhms (R1) and 47kOhms (R2). It exhibits a minimum DC current gain (hFE) of 80 at 5mA collector current and 10V Vce. Saturation voltage (Vce Sat) is a maximum of 250mV at 1mA base current and 10mA collector current. The cutoff current is a maximum of 500nA. This device is suitable for surface mount applications and is commonly utilized in consumer electronics and industrial control systems.
Additional Information
Series: -RoHS Status: RoHS Compliant By ExemptionManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | SOT-563, SOT-666 |
| Mounting Type | Surface Mount |
| Transistor Type | 1 NPN, 1 PNP - Pre-Biased (Dual) |
| Power - Max | 500mW |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 1mA, 10mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 5mA, 10V |
| Frequency - Transition | - |
| Resistor - Base (R1) | 4.7kOhms |
| Resistor - Emitter Base (R2) | 47kOhms |
| Supplier Device Package | SOT-563 |
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