NSBC143ZDXV6T5G
TRANS 2NPN PREBIAS 0.5W SOT563Manufacturer: onsemi
Categories: Bipolar Transistor Arrays, Pre-Biased
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onsemi NSBC143ZDXV6T5G is a dual NPN pre-biased bipolar transistor designed for surface mount applications in a SOT-563 package. This component features integrated base resistors (R1 = 4.7kO, R2 = 47kO) for simplified circuit design and reduced component count. It offers a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA, with a power dissipation of 500mW. The device exhibits a minimum DC current gain (hFE) of 80 at 5mA collector current and 10V Vce. Saturation voltage is specified at a maximum of 250mV at 1mA base current and 10mA collector current. Typical applications for this transistor array include logic level shifting, digital logic gates, and general-purpose amplification in consumer electronics and industrial control systems. The component is supplied in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-563, SOT-666 |
| Mounting Type | Surface Mount |
| Transistor Type | 2 NPN - Pre-Biased (Dual) |
| Power - Max | 500mW |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 1mA, 10mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 5mA, 10V |
| Frequency - Transition | - |
| Resistor - Base (R1) | 4.7kOhms |
| Resistor - Emitter Base (R2) | 47kOhms |
| Supplier Device Package | SOT-563 |
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