NSBC143ZDXV6T1
TRANS 2NPN PREBIAS 0.5W SOT563Manufacturer: onsemi
Categories: Bipolar Transistor Arrays, Pre-Biased
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onsemi NSBC143ZDXV6T1 is a dual NPN pre-biased bipolar transistor in a SOT-563 package. This device features integrated base resistors, simplifying circuit design and reducing component count. With a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA, it is suitable for general-purpose switching and amplification applications. The device offers a minimum DC current gain (hFE) of 80 at 5mA, 10V, and dissipation capability up to 500mW. The built-in resistors are specified as 4.7kOhms (R1) and 47kOhms (R2). Typical saturation voltage is 250mV at 1mA, 10mA. This component is commonly found in consumer electronics and industrial control systems. It is supplied on tape and reel.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-563, SOT-666 |
| Mounting Type | Surface Mount |
| Transistor Type | 2 NPN - Pre-Biased (Dual) |
| Power - Max | 500mW |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 1mA, 10mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 5mA, 10V |
| Frequency - Transition | - |
| Resistor - Base (R1) | 4.7kOhms |
| Resistor - Emitter Base (R2) | 47kOhms |
| Supplier Device Package | SOT-563 |
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