NSBC143TDXV6T1
TRANS 2NPN PREBIAS 0.5W SOT563Manufacturer: onsemi
Categories: Bipolar Transistor Arrays, Pre-Biased
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The onsemi NSBC143TDXV6T1 is a dual NPN pre-biased bipolar transistor array in a SOT-563 surface mount package. This component features integrated base resistors (R1 = 4.7kOhms), simplifying circuit design and reducing component count. It offers a Collector-Emitter voltage (Vceo) of 50V and a continuous Collector current (Ic) of up to 100mA, with a maximum power dissipation of 500mW. The device exhibits a minimum DC current gain (hFE) of 160 at 5mA collector current and 10V collector-emitter voltage, and a saturation voltage (Vce(sat)) of 250mV at 1mA base current and 10mA collector current. The NSBC143TDXV6T1 is commonly utilized in consumer electronics, industrial control systems, and automotive applications where space-constrained designs and simplified biasing are critical. The component is supplied on tape and reel.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-563, SOT-666 |
| Mounting Type | Surface Mount |
| Transistor Type | 2 NPN - Pre-Biased (Dual) |
| Power - Max | 500mW |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 1mA, 10mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 160 @ 5mA, 10V |
| Frequency - Transition | - |
| Resistor - Base (R1) | 4.7kOhms |
| Resistor - Emitter Base (R2) | - |
| Supplier Device Package | SOT-563 |
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