NSBC143EPDXV6T1G
TRANS PREBIAS NPN/PNP 50V SOT563Manufacturer: onsemi
Categories: Bipolar Transistor Arrays, Pre-Biased
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The onsemi NSBC143EPDXV6T1G is a dual pre-biased bipolar transistor array featuring one NPN and one PNP transistor. This component is housed in a compact SOT-563 surface mount package, suitable for applications demanding minimal board space. It offers a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA, with a power dissipation of 500mW. The integrated base resistors are 4.7kOhms for R1 and 4.7kOhms for R2, simplifying circuit design by eliminating external biasing components. This device finds utility in various industrial and consumer electronics applications requiring efficient signal switching and amplification. The device exhibits a Vce(sat) of 250mV at 1mA/10mA and a DC current gain (hFE) of at least 15 at 5mA/10V.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-563, SOT-666 |
| Mounting Type | Surface Mount |
| Transistor Type | 1 NPN, 1 PNP - Pre-Biased (Dual) |
| Power - Max | 500mW |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 1mA, 10mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 15 @ 5mA, 10V |
| Frequency - Transition | - |
| Resistor - Base (R1) | 4.7kOhms |
| Resistor - Emitter Base (R2) | 4.7kOhms |
| Supplier Device Package | SOT-563 |
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