Home

Products

Discrete Semiconductor Products

Transistors

Bipolar (BJT)

Bipolar Transistor Arrays, Pre-Biased

NSBC143EPDXV6T1

Banner
productimage

NSBC143EPDXV6T1

TRANS PREBIAS NPN/PNP SOT563

Manufacturer: onsemi

Categories: Bipolar Transistor Arrays, Pre-Biased

Quality Control: Learn More

onsemi NSBC143EPDXV6T1 is a dual pre-biased bipolar transistor featuring one NPN and one PNP element. This SOT-563 packaged component offers a 50V collector-emitter breakdown voltage and a maximum collector current of 100mA. The integrated base resistors are specified at 4.7kOhms for both R1 and R2. With a maximum power dissipation of 500mW and a saturation voltage of 250mV @ 1mA/10mA, this device is suitable for applications requiring simplified logic and signal conditioning. It finds utility in various electronic systems, including consumer electronics and industrial control.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseSOT-563, SOT-666
Mounting TypeSurface Mount
Transistor Type1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max500mW
Current - Collector (Ic) (Max)100mA
Voltage - Collector Emitter Breakdown (Max)50V
Vce Saturation (Max) @ Ib, Ic250mV @ 1mA, 10mA
Current - Collector Cutoff (Max)500nA
DC Current Gain (hFE) (Min) @ Ic, Vce15 @ 5mA, 10V
Frequency - Transition-
Resistor - Base (R1)4.7kOhms
Resistor - Emitter Base (R2)4.7kOhms
Supplier Device PackageSOT-563

Request a Quote

Name (required)

Phone (required)

Work Email (required)

Country (required)

Company Name (required)

CAPTCHA

Clients Also Buy
product image
MUN5235DW1T1

TRANS 2NPN PREBIAS 0.25W SOT363

product image
NSBC144EPDP6T5G

TRANS PREBIAS NPN/PNP 50V SOT963

product image
NSBC113EPDXV6T1G

TRANS PREBIAS NPN/PNP SOT563