NSBC143EDXV6T1
TRANS 2NPN PREBIAS 0.5W SOT563Manufacturer: onsemi
Categories: Bipolar Transistor Arrays, Pre-Biased
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The onsemi NSBC143EDXV6T1 is a dual NPN pre-biased bipolar transistor array designed for surface mount applications. This component features two NPN transistors integrated within a single SOT-563 package, offering a compact solution for space-constrained designs. Each transistor is internally biased with integrated resistors, simplifying circuit configuration. Key specifications include a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA. The device boasts a power dissipation rating of 500mW and a low collector cutoff current of 500nA. The minimum DC current gain (hFE) is 15 at 5mA collector current and 10V Vce. The saturation voltage (Vce Sat) is a maximum of 250mV at 1mA base current and 10mA collector current. The base resistors (R1 and R2) are specified at 4.7kOhms, facilitating direct interfacing with digital logic. This component finds application in industrial automation, consumer electronics, and communication systems requiring simplified transistor switching or logic functions. It is supplied in a Tape & Reel (TR) package.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-563, SOT-666 |
| Mounting Type | Surface Mount |
| Transistor Type | 2 NPN - Pre-Biased (Dual) |
| Power - Max | 500mW |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 1mA, 10mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 15 @ 5mA, 10V |
| Frequency - Transition | - |
| Resistor - Base (R1) | 4.7kOhms |
| Resistor - Emitter Base (R2) | 4.7kOhms |
| Supplier Device Package | SOT-563 |
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