NSBC143EDP6T5G
TRANS 2NPN PREBIAS 0.339W SOT963Manufacturer: onsemi
Categories: Bipolar Transistor Arrays, Pre-Biased
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onsemi NSBC143EDP6T5G is a dual NPN pre-biased bipolar transistor in an SOT-963 package. This device features integrated base resistors (R1 = 4.7kO, R2 = 4.7kO) simplifying circuit design. It offers a collector-emitter voltage of 50V and a maximum collector current of 100mA. The power dissipation is rated at 339mW. Minimum DC current gain (hFE) is 15 at 5mA, 10V. Collector cutoff current is a maximum of 500nA. Saturation voltage (Vce) is 250mV at 1mA, 10mA. This component is commonly utilized in industrial and consumer electronics applications requiring simplified switching and amplification circuits. The NSBC143EDP6T5G is supplied on tape and reel.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-963 |
| Mounting Type | Surface Mount |
| Transistor Type | 2 NPN - Pre-Biased (Dual) |
| Power - Max | 339mW |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 1mA, 10mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 15 @ 5mA, 10V |
| Frequency - Transition | - |
| Resistor - Base (R1) | 4.7kOhms |
| Resistor - Emitter Base (R2) | 4.7kOhms |
| Supplier Device Package | SOT-963 |
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