NSBC124XPDXV6T5G
TRANS PREBIAS NPN/PNP SOT563Manufacturer: onsemi
Categories: Bipolar Transistor Arrays, Pre-Biased
Quality Control: Learn More
The onsemi NSBC124XPDXV6T5G is a pre-biased bipolar transistor featuring a dual NPN and PNP configuration. This device, housed in a compact SOT-563 package, offers a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA. It includes integrated base resistors of 22kOhms (R1) and 47kOhms (R2) for simplified circuit design. The transistor exhibits a minimum DC current gain (hFE) of 80 at 5mA collector current and 10V collector-emitter voltage, with a saturation voltage (Vce Sat) of 250mV at 1mA base current and 10mA collector current. Maximum power dissipation is rated at 500mW. This component is commonly employed in applications requiring simplified logic interfacing and signal conditioning, such as in consumer electronics and industrial control systems. The NSBC124XPDXV6T5G is supplied on a tape and reel for automated assembly processes.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-563, SOT-666 |
| Mounting Type | Surface Mount |
| Transistor Type | 1 NPN, 1 PNP - Pre-Biased (Dual) |
| Power - Max | 500mW |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 1mA, 10mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 5mA, 10V |
| Frequency - Transition | - |
| Resistor - Base (R1) | 22kOhms |
| Resistor - Emitter Base (R2) | 47kOhms |
| Supplier Device Package | SOT-563 |
Request a Quote
Clients Also Buy
NSBC113EPDXV6T1G
TRANS PREBIAS NPN/PNP SOT563
NSBC114EPDXV6T1G
TRANS PREBIAS NPN/PNP 50V SOT563
NSVBC143TPDXV6T1G
TRANS PREBIAS NPN/PNP 50V SOT563
