NSBC124XDXV6T1
TRANS 2NPN PREBIAS 0.5W SOT563Manufacturer: onsemi
Categories: Bipolar Transistor Arrays, Pre-Biased
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The onsemi NSBC124XDXV6T1 is a dual pre-biased NPN bipolar transistor array in a SOT-563 package. This device features integrated base resistors (R1 = 22kO, R2 = 47kO) for simplified circuit design. It offers a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA, with a power dissipation of 500mW. The transistor exhibits a minimum DC current gain (hFE) of 80 at 5mA collector current and 10V Vce. Saturation voltage is specified at 250mV (typical) at 1mA base current and 10mA collector current. Applications for this component include digital logic, switching, and amplification circuits, commonly found in consumer electronics and industrial control systems. The NSBC124XDXV6T1 is supplied on tape and reel.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-563, SOT-666 |
| Mounting Type | Surface Mount |
| Transistor Type | 2 NPN - Pre-Biased (Dual) |
| Power - Max | 500mW |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 1mA, 10mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 5mA, 10V |
| Frequency - Transition | - |
| Resistor - Base (R1) | 22kOhms |
| Resistor - Emitter Base (R2) | 47kOhms |
| Supplier Device Package | SOT-563 |
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