NSBC124EPDXV6T5G
TRANS PREBIAS NPN/PNP 50V SOT563Manufacturer: onsemi
Categories: Bipolar Transistor Arrays, Pre-Biased
Quality Control: Learn More
onsemi NSBC124EPDXV6T5G is a dual NPN/PNP pre-biased bipolar transistor in a SOT-563 package. This surface mount device offers a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA, with a power dissipation of 500mW. Key specifications include a minimum DC current gain (hFE) of 60 at 5mA/10V, a base resistor (R1) of 22kOhms, and an emitter-base resistor (R2) of 22kOhms. The transistor exhibits a Vce saturation of 250mV at 300µA/10mA. This component is widely utilized in portable electronics, consumer devices, and automotive applications where simplified circuit design and reduced component count are critical. The NSBC124EPDXV6T5G is supplied on tape and reel.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-563, SOT-666 |
| Mounting Type | Surface Mount |
| Transistor Type | 1 NPN, 1 PNP - Pre-Biased (Dual) |
| Power - Max | 500mW |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 300µA, 10mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 60 @ 5mA, 10V |
| Frequency - Transition | - |
| Resistor - Base (R1) | 22kOhms |
| Resistor - Emitter Base (R2) | 22kOhms |
| Supplier Device Package | SOT-563 |
| Grade | - |
| Qualification | - |
Request a Quote
Clients Also Buy
MUN5235DW1T1
TRANS 2NPN PREBIAS 0.25W SOT363
NSBC113EPDXV6T1G
TRANS PREBIAS NPN/PNP SOT563
NSBA123JDXV6T5G
TRANS PREBIAS 2PNP 50V SOT563
