NSBC124EPDXV6T1
TRANS PREBIAS NPN/PNP SOT563Manufacturer: onsemi
Categories: Bipolar Transistor Arrays, Pre-Biased
Quality Control: Learn More
The onsemi NSBC124EPDXV6T1 is a dual pre-biased bipolar transistor, featuring one NPN and one PNP element within a single SOT-563 package. This surface-mount component is rated for a 50V collector-emitter breakdown voltage and a maximum collector current of 100mA. It offers a minimum DC current gain (hFE) of 60 at 5mA collector current and 10V Vce. Built-in 22kO base and emitter-base resistors provide simplified circuit design. The device has a typical saturation voltage of 250mV at 300µA base current and 10mA collector current. With a maximum power dissipation of 500mW and a collector cutoff current of 500nA, this transistor array is suitable for applications in industrial automation, consumer electronics, and communication systems requiring compact, integrated switching and amplification solutions. The component is supplied in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-563, SOT-666 |
| Mounting Type | Surface Mount |
| Transistor Type | 1 NPN, 1 PNP - Pre-Biased (Dual) |
| Power - Max | 500mW |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 300µA, 10mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 60 @ 5mA, 10V |
| Frequency - Transition | - |
| Resistor - Base (R1) | 22kOhms |
| Resistor - Emitter Base (R2) | 22kOhms |
| Supplier Device Package | SOT-563 |
| Grade | - |
| Qualification | - |